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While induced spin polarization of a palladium (Pd) overlayer on antiferromagnetic and magneto-electric Cr₂O₃(0001) is possible because of the boundary polarization at the Cr₂O₃(0001), in the single domain state, the Pd thin film appears to be ferromagnetic on its own, likely as a result of strain. In the conduction band, we find the experimental evidence of ferromagnetic spin polarized in Pd thin films on a Cr₂O₃(0001) single crystal, especially in the thin limit, Pd thickness of around 1–4 nm. Indeed there is significant spin polarization in 10 Å thick Pd films on Cr₂O₃(0001) at 310 K, i.e. above the Néel temperature of bulk Cr₂O₃. While Cr₂O₃(0001) has surface moments that tend to align along the surface normal, for Pd on Cr₂O₃, the spin polarization contains an in-plane component. Strain in the Pd adlayer on Cr₂O₃(0001) appears correlated to the spin polarization measured in spin polarized inverse photoemission spectroscopy. Further evidence for magnetization of Pd on Cr₂O₃is provided by measurement of the exchange bias fields in Cr₂O₃/Pd(buffer)/[Co/Pd]_nexchange bias systems. The magnitude of the exchange bias field is, over a wide temperature range, virtually unaffected by the Pd thickness variation between 1 and 2 nm.

 

A magnetocaloric effect (MCE) with sizable isothermal entropy change (ΔS) maintained over a broad range of temperatures above the blocking temperature is reported for a rare earth-free superparamagnetic nanoparticle system comprising of Fe–TiN heterostructure. Superparamagnetic iron (Fe) particles were embedded in a titanium nitride (TiN) thin film matrix in a TiN/Fe/TiN multilayered pattern using a pulsed laser deposition method. High angle annular dark-field images in conjunction with dispersive energy analysis, recorded using scanning transmission electron microscopy, show a clear presence of alternating layers of Fe and TiN with a distinct atomic number contrast between Fe particles and TiN. Quantitative information about the isothermal entropy change (ΔS) and the magnetocaloric effect in the multilayer Fe–TiN system has been obtained by applying Maxwell relation to the magnetization vs temperature data at various fields. With the absence of a dynamic magnetic hysteresis above the blocking temperature, the negative ΔS as high as 4.18 × 10 3  J/Km 3 (normal or forward MCE) is obtained at 3 T at 300 K. 

We report direct imaging of boundary magnetization associated with antiferromagnetic domains in magnetoelectric epitaxial Cr 2 O 3 thin films using diamond nitrogen vacancy microscopy. We found a correlation between magnetic domain size and structural grain size which we associate with the domain formation process. We performed field cooling, i.e. , cooling from above to below the Néel temperature in the presence of a magnetic field, which resulted in the selection of one of the two otherwise degenerate 180° domains. Lifting of such a degeneracy is achievable with a magnetic field alone due to the Zeeman energy of a weak parasitic magnetic moment in Cr 2 O 3 films that originates from defects and the imbalance of the boundary magnetization of opposing interfaces. This boundary magnetization couples to the antiferromagnetic order parameter enabling selection of its orientation. Nanostructuring the Cr 2 O 3 film with mesa structures revealed reversible edge magnetic states with the direction of magnetic field during field cooling. 

Abstract Applications of quantum information science (QIS) generally rely on the generation and manipulation of qubits. Still, there are ways to envision a device with a continuous readout, but without the entangled states. This concise perspective includes a discussion on an alternative to the qubit, namely the solid-state version of the Mach–Zehnder interferometer, in which the local moments and spin polarization replace light polarization. In this context, we provide some insights into the mathematics that dictates the fundamental working principles of quantum information processes that involve molecular systems with large magnetic anisotropy. Transistors based on such systems lead to the possibility of fabricating logic gates that do not require entangled states. Furthermore, some novel approaches, worthy of some consideration, exist to address the issues pertaining to the scalability of quantum devices, but face the challenge of finding the suitable materials for desired functionality that resemble what is sought from QIS devices. 

Abstract Multi-functional thin films of boron (B) doped Cr 2 O 3 exhibit voltage-controlled and nonvolatile Néel vector reorientation in the absence of an applied magnetic field, H . Toggling of antiferromagnetic states is demonstrated in prototype device structures at CMOS compatible temperatures between 300 and 400 K. The boundary magnetization associated with the Néel vector orientation serves as state variable which is read via magnetoresistive detection in a Pt Hall bar adjacent to the B:Cr 2 O 3 film. Switching of the Hall voltage between zero and non-zero values implies Néel vector rotation by 90 degrees. Combined magnetometry, spin resolved inverse photoemission, electric transport and scanning probe microscopy measurements reveal B-dependent T N and resistivity enhancement, spin-canting, anisotropy reduction, dynamic polarization hysteresis and gate voltage dependent orientation of boundary magnetization. The combined effect enables H  = 0, voltage controlled, nonvolatile Néel vector rotation at high-temperature. Theoretical modeling estimates switching speeds of about 100 ps making B:Cr 2 O 3 a promising multifunctional single-phase material for energy efficient nonvolatile CMOS compatible memory applications. 

Boron (B) alloying transforms the magnetoelectric antiferromagnet Cr₂O₃into a multifunctional single‐phase material which enables electric field driven π/2 rotation of the Néel vector. Nonvolatile, voltage‐controlled Néel vector rotation is a much‐desired material property in the context of antiferromagnetic spintronics enabling ultralow power, ultrafast, nonvolatile memory, and logic device applications. Néel vector rotation is detected with the help of heavy metal (Pt) Hall‐bars in proximity of pulsed laser deposited B:Cr₂O₃films. To facilitate operation of B:Cr₂O₃‐based devices in CMOS (complementary metal‐oxide semiconductor) environments, the Néel temperature,T_N, of the functional film must be tunable to values significantly above room temperature. Cold neutron depth profiling and X‐ray photoemission spectroscopy depth profiling reveal thermally activated B‐accumulation at the B:Cr₂O₃/ vacuum interface in thin films deposited on Al₂O₃substrates. The B‐enrichment is attributed to surface segregation. Magnetotransport data confirm B‐accumulation at the interface within a layer of ≈50 nm thick where the device properties reside. HereT_Nenhances from 334 K prior to annealing, to 477 K after annealing for several hours. Scaling analysis determinesT_Nas a function of the annealing temperature. Stability of post‐annealing device properties is evident from reproducible Néel vector rotation at 370 K performed over the course of weeks.